首页> 外国专利> Leaving the part which the said insulating material exposes in metal membrane formation manner on the insulating material, continuity manner of the through hole where

Leaving the part which the said insulating material exposes in metal membrane formation manner on the insulating material, continuity manner of the through hole where

机译:将所述绝缘材料以金属膜形成方式留在绝缘材料上的通孔的连续方式留在绝缘材料上的部分

摘要

PROBLEM TO BE SOLVED: To surely and easily form a metallic film with high reliability without using Ag paste and to conduct a through-hole in a method for forming the metallic film and a method for producing a contact probe. ;SOLUTION: A metallic film 17 for etching previously provided on an insulating material 14 while leaving a part where the insulating material is exposed, is vaporized at least partly by plasma etching and a part of the vaporized metal is deposited on a part where the insulating material is exposed to form a plating substrate film 18. Subsequently, the plating substrate is electroplated with a metal to form a metallic plating film 19.;COPYRIGHT: (C)1999,JPO
机译:解决的问题:在不使用银膏的情况下可靠且容易地形成具有高可靠性的金属膜,并且在形成金属膜的方法和制造接触探针的方法中进行通孔。 ;解决方案:用于蚀刻的金属膜17预先设置在绝缘材料14上,同时保留绝缘材料暴露的部分,通过等离子蚀刻将其至少部分蒸发,并且将一部分蒸发的金属沉积在绝缘材料的一部分上将该材料暴露以形成电镀基底膜18。随后,用金属电镀该电镀基底以形成金属电镀膜19 。;版权所有:(C)1999,JPO

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号