Ferroelectric thin film manufacturing method, the voltage applied etching apparatus, dielectric crystal wafer strength and dielectric crystal thin film substrate strength

摘要

And a surface of the other face of the one facing each other, and using a strong etching rate of the one surface is larger than the etching rate of the face of the other dielectric crystal in a state where the polarization directions are aligned in one direction and is strong this I for etching a surface of one of the dielectric crystal. As well as etching and applying a predetermined voltage to the ferroelectric crystal. As a result, the etching progresses, the thickness of the ferroelectric crystal reaches the desired thickness, the direction of polarization of the ferroelectric crystal is inverted, and the progress of the etching is stopped automatically. As a result, it is possible to manufacture a ferroelectric crystal thin film having a uniform thickness in a large area and very thin.