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SURFACE-EMISSION WAFER, ITS MANUFACTURING METHOD AND BURN-IN METHOD OF SURFACE-EMISSION WAFER

机译:表面发射晶片,其制造方法和表面嵌入方法

摘要

PROBLEM TO BE SOLVED: To simplify a burn-in process and to reduce cost in a surface-emission wafer, and a manufacturing method and a burn-in method of the wafer.;SOLUTION: The surface-emission wafer is provided with a substrate 10 and a plurality of surface-emission elements 1 formed on the substrate 10. Each surface-emission element 1 includes a light emitting element 20, first and second electrodes 30 and 32 driving the light emitting element 20 and a rectifying element 40. The rectifying element 40 is connected in parallel between the first and the second electrodes 30 and 32, and has a rectifying operation in a direction opposite to the light emitting element 20. A plurality of the surface-emission elements 1 are connected in series in a direction with which forward directions of the light emitting elements 20 are matched.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:为了简化表面发射晶片的老化过程并降低成本,以及该晶片的制造方法和老化方法;解决方案:该表面发射晶片具有衬底。如图10所示,每个表面发射元件1包括发光元件20,驱动该发光元件20的第一和第二电极30和32以及整流元件40,该多个表面发射元件1形成在基板10上。元件40并联连接在第一和第二电极30和32之间,并且在与发光元件20相反的方向上具有整流操作。多个表面发射元件1在与发光元件20相反的方向上串联连接。发光元件20的前向方向是一致的。版权所有:(C)2006,日本特许厅

著录项

  • 公开/公告号JP2006066845A

    专利类型

  • 公开/公告日2006-03-09

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP20040273351

  • 发明设计人 ONISHI HAJIME;NISHIDA TETSURO;

    申请日2004-09-21

  • 分类号H01S5/183;G01R31/30;H01L21/66;H01S5/026;

  • 国家 JP

  • 入库时间 2022-08-21 21:50:36

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