Being the semiconductor read-only memory device null semiconductor read-only memory structure which has

摘要

(57) Abstract This invention, the baseplate contact (9) is made to contact with the through hole (11) with the polycrystal silicon of the well contact, the metal wire (7) and the word line (WL), and the break (10) of the word line (WL) in regard to the read-only memory device, making use of the even intermediate cell (16), the above-mentioned cell, paralleling to the word line (WL), is arranged in a kind of state where it is copied to the mirror alternately. The word line (WL) is broken by longitudinal direction to every memory cell (for example 10), of the respective 1st quantity is refreshed and, by the metal wire (7) profit (for example 11), and the semiconductor baseplate respectively, standard electric potential (Vss) is supplied to every memory cell of the 2nd quantity by the baseplate contact (9).