Between the polysilicon - polysilicon which formation mannered null BiCMOS it is processed and is unified and of the capacitor

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a low-cost polysilicon-to-polysilicon capacitor, which is used in a CMOS or Bi CMOS integrated circuit, and which is not complicated.;SOLUTION: The method, which is integrated with a Bi CMOS process and which forms the polysilicon-to-polysilicon capacitor, comprises a step in which the lower-part plate electrode of the capacitor is formed, while the gate electrode of a CMOS transistor is stuck and a step in which an upper-part SiGe plate electrode is formed, while the SiGe base region of a heterojunction bipolar transistor is grown.;COPYRIGHT: (C)2002,JPO