The electrical transmitter which uses the semiconductor device, and its semiconductor device, the invertor and the general-purpose invertor for drive, the large electrical high frequency communication equipment

摘要

Try the electric quality of the semiconductor device to be able to improve finally by making the unevenness of the silicon carbide semiconductor baseplate surface small in the semiconductor device which uses the silicon carbide semiconductor baseplate which possesses the extrinsic semiconductor territory of P type and the N type which were formed with ion implantation. The semiconductor device of this invention, (the 000-1) the surface or (the 000-1) the angle which is from the surface in the silicon carbide semiconductor region 1,2 which possesses the surface where it tilts as the most surface surface, the P type semiconductor region 3 and the N type semiconductor region at least one side is formed selectively by ion implantation, it is the Schottky barrier diode, or the PN type diode which control the direction of the electric current which flows to the direction which is vertical to the most surface surface by the fact that the metal electrode is formed by that most surface surface, impresses voltage in that metal electrode.