SEMICONDUCTOR DEVICE, POWER CONVERTER USING SEMICONDUCTOR DEVICE, DRIVING INVERTER, GENERAL-PURPOSE INVERTER, AND HIGH POWER HIGH FREQUENCY COMMUNICATION EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To improve electric characteristics by forming a semiconductor device on an epitaxial phase on a silicon carbide substrate suppressed in fine unevenness on the surface by specifying the crystal plane orientation of the substrate.;SOLUTION: As the semiconductor device formed on the silicon carbide semiconductor substrate there are provided a diode and a transistor which are manufactured by selectively forming a p or n type region on an epitaxial layer on a face inclined by 0° or more or 1° or less from the (000-1) plane of the substrate with ion implantation. The epitaxial layer is subjected to a heat treatment in the mixed gas atmosphere of hydrogen and propane at a temperature from 1,400°C to 1,600°C, and the height of any step on the surface thereof is set to be ≤1 nm. Further, the epitaxial layer is formed through a gas phase reaction of silane and propane gas. The atmosphere of the gas phase reaction is assumed to be ≤ 1 in a composition ratio of atomic density of carbon (C) with respect to silicon (Si).;COPYRIGHT: (C)2005,JPO&NCIPI