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Non-volatile and non-uniform trapped-charge memory cell structure and method of fabrication
Non-volatile and non-uniform trapped-charge memory cell structure and method of fabrication
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机译:非易失性和非均匀俘获电荷存储单元结构及其制造方法
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摘要
A memory cell having a charge-trapping structure in the form of a layer of conductive clusters disposed between upper and lower insulator layers is disclosed. The memory cell can otherwise be constructed and operated similarly to a nitride read-only memory cell.
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