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Light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency
Light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency
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机译:具有高光提取效率的发光氮化镓基III-V族化合物半导体器件
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摘要
A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and/or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, the operating voltage is decreased and the efficiency of light extracting is improved.
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