Method for preparing ge1-x-ysnxey (e=p, as, sb) semiconductors and related si-ge-sn-e and si-ge-e analogs

摘要

A process for is provided for synthesizing a compound having the formula E(GeH₃)₃ wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P). GeH₃Br and [CH₃)₃Si]₃E are combined under conditions whereby E(GeH₃)₃ is obtained. The E(GeH₃)₃ is purified by trap-to-trap fractionation. Yields from about 70% to about 76% can be obtained. The E(GeH₃)₃ can be used as a gaseous precursor for doping a region of a semiconductor material comprising Ge, SnGe, SiGe and SiGeSn in a chemical vapor deposition reaction chamber.