Study of Optical and Electronic Properties of Semiconductors, SbSBr, SbSeI,and SbSI.

摘要

A preliminary energy band structure of SbSI obtained by empirical pseudopotential method is discussed with references to existing optical data and other calculations. Brief discussions on band structure results for niobium, of calculations on the angular-dependent photoemission from GaAs and charge distributions in transition metal compounds, TiC, TiN, ZrC, and ZrN are included.