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Method of manufacturing polysilicon thin film transistor plate and liquid crystal display including polysilicon thin film transistor plate manufactured by the method
Method of manufacturing polysilicon thin film transistor plate and liquid crystal display including polysilicon thin film transistor plate manufactured by the method
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机译:多晶硅薄膜晶体管板的制造方法以及包括通过该方法制造的多晶硅薄膜晶体管板的液晶显示器
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摘要
Provided are a method of manufacturing a polysilicon thin film transistor plate, which includes leveling the surface of crystallized polysilicon having protruding grains at grain boundaries to improve the electrical characteristics of an active layer, and a liquid crystal display including a polysilicon thin film transistor plate manufactured by the method. The method of manufacturing a polysilicon thin film transistor plate includes loading a substrate on which polysilicon grains are formed, removing protruding grains at grain boundaries among the polysilicon grains by chemical mechanical polishing (“CMP”) and forming a polished substrate, cleaning the polished substrate and forming a cleaned substrate, and unloading the cleaned substrate.
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