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Forming of trenches or wells having different destinations in a semiconductor substrate
Forming of trenches or wells having different destinations in a semiconductor substrate
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机译:在半导体衬底中形成具有不同目的地的沟槽或阱
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摘要
A method for forming, in a semiconductor substrate, wells and/or trenches having different destinations, including the steps of at least partly simultaneously etching cavities according to the pattern of the trenches and/or wells; closing the openings of the cavities with at least one first non-conformal thick layer, and selectively opening the first thick layer according to the subsequent processings.
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