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Growth process of a crystalline gallium nitride based compound and semiconductor device including gallium nitride based compound
Growth process of a crystalline gallium nitride based compound and semiconductor device including gallium nitride based compound
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机译:晶体氮化镓基化合物的生长工艺和包括氮化镓基化合物的半导体器件
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摘要
In a method of forming a crystalline GaN-based material, a first nucleation layer is formed on a substrate at a first temperature, followed with forming a second nucleation layer at a second temperature different from the first temperature. The first and second nucleation layers are composed of AlxInyGa(1-x-y)N. Subsequently, a layer of a crystalline GaN-based compound is epitaxy grown on the second nucleation layer.
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机译:在形成基于结晶GaN的材料的方法中,在第一温度下在基板上形成第一成核层,然后在不同于第一温度的第二温度下形成第二成核层。第一和第二成核层由Al x Sub> In y Sub> Ga (1-x-y) Sub> N组成。随后,在第二成核层上外延生长结晶的GaN基化合物层。
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