首页>
外国专利>
Method of forming silicon-based thin film, silicon-based thin film, and photovoltaic element
Method of forming silicon-based thin film, silicon-based thin film, and photovoltaic element
展开▼
机译:形成硅基薄膜的方法,硅基薄膜和光伏元件
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method of forming a silicon-based thin film according to the present invention comprises introducing a source gas containing silicon fluoride and hydrogen into a vacuum vessel, and using a high frequency plasma CVD method to form a silicon-based thin film on a substrate introduced into the vacuum vessel, wherein a luminous intensity attributed to SiFα (440 nm) is not smaller than a luminous intensity attributed to Hα (656 nm), thereby providing a photovoltaic element with excellent performance at a low cost as compared with a conventional one, a method of forming a silicon-based thin film with excellent characteristics in a short process cycle time at a further increased film-forming rate, a silicon-based thin film formed by the method, and a photovoltaic element comprising the silicon-based thin film with excellent characteristics, adhesion, and resistance to the environments.
展开▼