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Method for producing hydrogen-doped silica powder, hydrogen-doped silica powder obtained from that method for use in a quartz glass crucible

机译:氢掺杂二氧化硅粉末的制造方法,由该方法得到的氢掺杂二氧化硅粉末用于石英玻璃坩埚

摘要

It is an object of the present invention to provide a hydrogen-doped silica powder that is useful in the formation of a quartz glass crucible that is capable of pulling a silicon single crystal without causing a state having dislocations in the silicon single crystal due to peeling of quartz glass segment. It is a further object of the invention to provide a quartz glass crucible for use in pulling a silicon single crystal whose inner surface is formed by use of the hydrogen-doped silica powder and a producing method of the silica powder.;In order to achieve the objects above, the present invention provides a hydrogen-doped silica powder for use in producing a quartz glass crucible for use in pulling a silicon single crystal, wherein the silica powder is made of synthetic silica powder, natural silica powder or a mixture thereof, with a hydrogen concentration being in the range of 1×1017 to 5×1019 molecules/cm3, and a producing method thereof, and a quartz glass crucible for pulling a silicon single crystal whose inner surface is made of the silica powders.
机译:本发明的目的是提供一种氢掺杂二氧化硅粉末,其可用于形成石英玻璃坩埚,该石英玻璃坩埚能够提拉硅单晶而不会由于剥离而在硅单晶中引起位错。石英玻璃段。本发明的另一个目的是提供一种石英玻璃坩埚,该石英玻璃坩埚用于拉制单晶硅,该单晶硅的内表面是通过使用氢掺杂的二氧化硅粉末形成的;以及该二氧化硅粉末的生产方法。鉴于上述目的,本发明提供了一种氢掺杂的二氧化硅粉末,其用于制备用于提拉单晶硅的石英玻璃坩埚,其中所述二氧化硅粉末由合成二氧化硅粉末,天然二氧化硅粉末或其混合物制成,氢浓度在1×10 17 至5×10 19 分子/ cm 3 的范围内,及其生产方法,石英玻璃坩埚,其用于拉制内表面由二氧化硅粉末制成的硅单晶。

著录项

  • 公开/公告号US7074731B2

    专利类型

  • 公开/公告日2006-07-11

    原文格式PDF

  • 申请/专利权人 YASUO OHAMA;TAKAYUKI TOGAWA;

    申请/专利号US20030440429

  • 发明设计人 TAKAYUKI TOGAWA;YASUO OHAMA;

    申请日2003-05-16

  • 分类号C03C3/06;

  • 国家 US

  • 入库时间 2022-08-21 21:44:51

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