Non-volatile memory element with oxide stack and non-volatile SRAM using the same

摘要

Non-volatile memory elements having a high programming speed and a reduced constant voltage requirement for data storage. Each memory cell of a non-volatile SRAM includes an SRAM unit and a non-volatile memory unit. When power is off, the data levels of data nodes of the SRAM unit are programmed into a corresponding non-volatile memory element through a pass transistor connected to the data node. When the power is on, the data levels programmed into the non-volatile memory elements are recalled to the corresponding data nodes through the pass transistors, and then the programmed non-volatile memory element is erased. The non-volatile memory element has an oxide stack including a tunnel oxide film, a storage oxide film, and a blocking oxide film. A potential well where the SRAM unit is formed is isolated from a potential well where the non-volatile memory unit is formed. Bias voltages are applied during program, recall and erase modes to the potential well where the non-volatile memory unit is formed.