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A Wideband Gap Power Semiconductor Device Having A Low On-Resistance And Having A High Aavalanche Ccapability Used For Power Control
A Wideband Gap Power Semiconductor Device Having A Low On-Resistance And Having A High Aavalanche Ccapability Used For Power Control
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机译:具有低导通电阻和高雪崩电容的宽带隙功率半导体器件,用于功率控制
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摘要
A power semiconductor device includes a first semiconductor layer, a second semiconductor layer of a first conductivity type, first and second main electrodes, a control electrode and a third semi-conductor layer. The second semiconductor layer is formed on the first semiconductor layer. The first and second main electrodes are formed on the second semiconductor layer separately from each other. The control electrode is formed on the second semiconductor layer between the first and second main electrodes. The third semiconductor layer is formed on the second semiconductor layer between the control electrode and the second main electrode.
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