Physics and technology of high-speed, low on-resistance power devices.

摘要

This thesis presents three new approaches to increasing the switching speed of the Insulated Gate Bipolar Transistor (IGBT) which do not require a reduction of the carrier lifetimes in the device. Using one of these approaches, IGBTs whose drift region is fully conductivity modulated during the on-state, and which turn off in under 500 ns, were built. The design, fabrication and characterization of these devices, as well as the principles governing the approaches themselves, are presented. The power dissipation versus frequency behavior of the thyristor, the power bipolar transistor, the DMOS transistor and the IGBT are also investigated. A fabrication process sequence that produces planar, fully dielectrically isolated islands of single-crystal silicon on a single-crystal silicon substrate is also described.