首页> 外国专利> Semiconductor device including a bootstrap diode, high side power drive circuit, low side power drive circuit, and control circuit for controlling a high side power device and low side power device

Semiconductor device including a bootstrap diode, high side power drive circuit, low side power drive circuit, and control circuit for controlling a high side power device and low side power device

机译:半导体装置,包括自举二极管,高压侧功率驱动电路,低压侧功率驱动电路,以及用于控制高压侧功率器件和低压侧功率器件的控制电路

摘要

A semiconductor device includes, a high side drive circuit for controlling the high side power device and including a circuit load, a low side drive circuit for controlling the low side power device, a VCC terminal connected to the low side drive circuit and for supplying a VCC potential to the low side drive circuit, the VCC potential serving as a power supply potential to the low side drive circuit, a bootstrap diode connected at its anode to the VCC terminal and at its cathode to the high side drive circuit and used to produce a VB potential serving as a power supply potential to the high side drive circuit, and means for turning off the circuit load before the VB potential becomes lower than the VCC potential.
机译:半导体器件包括:用于控制高侧功率器件并包括电路负载的高侧驱动电路;用于控制低侧功率器件的低侧驱动电路;连接至低侧驱动电路并用于提供电源的VCC端子。低端驱动电路的VCC电位,低端驱动电路的电源电位为VCC,其阳极连接到VCC端子并在其阴极连接到高端驱动电路的自举二极管用于生产VB电势用作向高端驱动电路的电源电势,以及用于在VB电势变得低于VCC电势之前关断电路负载的装置。

著录项

  • 公开/公告号US08248746B2

    专利类型

  • 公开/公告日2012-08-21

    原文格式PDF

  • 申请/专利权人 MITSUTAKA HANO;

    申请/专利号US12886980

  • 发明设计人 MITSUTAKA HANO;

    申请日2010-09-21

  • 分类号H02H3/24;H02H3/20;

  • 国家 US

  • 入库时间 2022-08-21 17:34:52

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号