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Method of forming a multi-layer semiconductor structure having a seamless bonding interface
Method of forming a multi-layer semiconductor structure having a seamless bonding interface
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机译:形成具有无缝键合界面的多层半导体结构的方法
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摘要
A method of forming a multi-layer semiconductor structure includes providing a first layer of a patterned copper bond film having a first predetermined thickness onto a first surface of a first semiconductor. The method further includes providing a second layer of a patterned copper bond film having a second predetermined thickness onto a first surface of a second semiconductor. The first and second semiconductor structures can be aligned, such that the first and second patterned copper bond films are disposed in proximity. A virtually seamless bond can be formed between the first and second patterned copper bond films to provide the first and second semiconductors as the multi-layer semiconductor structure.
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