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Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same
Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same
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机译:具有均匀空位缺陷的单晶硅锭和晶片及其制造方法和设备
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摘要
The present invention improves upon the Czochralski method for growing a single-crystal silicon ingot and provides a high quality silicon wafer having an oxide layer with superior voltage-resistance characteristics. An apparatus and method are also provided, whereby vacancy defect density and distribution are uniformly controlled. A single-crystal silicon ingot is grown under a condition where the temperature variation of the ingot is less than or equal to 20° C./cm in the temperature range of 1000 to 1100° C.
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