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Method of verifying proximity effect correction in electron beam lithography

机译:电子束光刻中验证邻近效应校正的方法

摘要

Verifying whether correcting data used for proximity effect correction is normal before or during actual lithographic writing. A lithographically written region is virtually divided into subfields. Verification of a correcting value for proximity effect correction for each subfield is normal is made. The correcting values (in percent) for proximity effect corrections for the subfields are stored in a memory. The correcting values are successively supplied to a FIFO and to a comparator. A reference value from a register is also supplied to the comparator. The correcting value for the first subfield r(1) and the output data from the FIFO are supplied to the comparator. The output data from the FIFO includes data about subfields located above and left, respectively, of the subfield r(1). The comparator produces the differences between the incoming values and takes their absolute values. The absolute values are compared with a reference value from the register.
机译:在实际光刻之前或期间,验证用于邻近效应校正的校正数据是否正常。平版印刷区域实际上分为子域。验证每个子场的邻近效应校正的校正值是否正常。用于子场的邻近效应校正的校正值(百分比)存储在存储器中。校正值依次提供给FIFO和比较器。来自寄存器的参考值也提供给比较器。第一子场r(1)的校正值和来自FIFO的输出数据被提供给比较器。来自FIFO的输出数据包括关于分别位于子字段r(1)的上方和左侧的子字段的数据。比较器产生输入值之间的差,并取其绝对值。将绝对值与寄存器中的参考值进行比较。

著录项

  • 公开/公告号US7049609B2

    专利类型

  • 公开/公告日2006-05-23

    原文格式PDF

  • 申请/专利权人 MASAKATSU TAKEHANA;

    申请/专利号US20040957333

  • 发明设计人 MASAKATSU TAKEHANA;

    申请日2004-10-01

  • 分类号H03M1/00;

  • 国家 US

  • 入库时间 2022-08-21 21:42:47

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