Low power sleep mode operation technique for dynamic random access memory (DRAM) devices and integrated circuit devices incorporating embedded DRAM

摘要

A low power Sleep Mode operation technique for dynamic random access (DRAM) devices and integrated circuit devices incorporating embedded DRAM. By counting clock (CLK) cycles in accordance with the technique disclosed, refresh time (t_REF) does not vary with all possible process corners, voltages and temperatures (PVT) since the clock signal exhibits a steady frequency over PVT applied to the DRAM and an internal timer placed on chip will vary directly with these parameters. After entering Sleep Mode, the main internal clock signal is inhibited from propagating around the device chip and, at this time, much of the associated circuitry can be power-gated to conserve power, typically with signals that have a boosted level to provide a negative gate-to-source voltage (V_GS) on the power-gating transistors.