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Method of predicting quiescent current variation of an integrated circuit die from a process monitor derating factor

机译:根据过程监控器降额因子预测集成电路管芯静态电流变化的方法

摘要

In exemplary embodiments, a method and computer program product for predicting quiescent current variation of an integrated circuit die include steps of: (a) receiving as input a value of a derating factor from a process monitor cell on an integrated circuit die and an on-chip variation of the derating factor; (b) constructing a curve fitting formula for estimating a quiescent current of the integrated circuit die as a function of the derating factor; (c) calculating minimum and maximum values of the quiescent current from the curve fitting formula, the value of the derating factor from the process monitor cell, and the on-chip variation of the derating factor to generate an estimate of minimum and maximum values for the quiescent current; and (d) generating as output the estimated minimum and maximum values of the quiescent current.
机译:在示例性实施例中,一种用于预测集成电路管芯的静态电流变化的方法和计算机程序产品包括以下步骤:(a)从集成电路管芯上的过程监控器单元和导通管接收降额因数的值作为输入。降额因子的芯片变化; (b)构造曲线拟合公式,以根据降额因数来估计集成电路芯片的静态电流; (c)根据曲线拟合公式计算静态电流的最小值和最大值,来自过程监控器单元的降额系数值以及片上降额系数的变化量,以生成用于静态电流; (d)产生估计的静态电流的最小值和最大值作为输出。

著录项

  • 公开/公告号US7069178B2

    专利类型

  • 公开/公告日2006-06-27

    原文格式PDF

  • 申请/专利权人 QIAN CUI;SANDEEP BHUTANI;

    申请/专利号US20040955168

  • 发明设计人 QIAN CUI;SANDEEP BHUTANI;

    申请日2004-09-29

  • 分类号G06F3/01;

  • 国家 US

  • 入库时间 2022-08-21 21:42:08

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