首页> 外国专利> BUMP FORMING APPARATUS FOR CHARGE APPEARANCE SEMICONDUCTOR SUBSTRATE, CHARGE REMOVAL METHOD FOR CHARGE APPEARANCE SEMICONDUCTOR SUBSTRATE, CHARGE REMOVING UNIT FOR CHARGE APPEARANCE SEMICONDUCTOR SUBSTRATE, AND CHARGE APPEARANCE SEMICONDUCTOR SUBSTRATE

BUMP FORMING APPARATUS FOR CHARGE APPEARANCE SEMICONDUCTOR SUBSTRATE, CHARGE REMOVAL METHOD FOR CHARGE APPEARANCE SEMICONDUCTOR SUBSTRATE, CHARGE REMOVING UNIT FOR CHARGE APPEARANCE SEMICONDUCTOR SUBSTRATE, AND CHARGE APPEARANCE SEMICONDUCTOR SUBSTRATE

机译:电荷外观半导体基体的凹凸形成装置,电荷外观半导体基体的电荷去除方法,电荷外观半导体基体的电荷去除单元和电荷外观半导体基体

摘要

The present invention provides a bump forming apparatus (101, 501) which can prevent charge appearance semiconductor substrates (201, 202) from pyroelectric breakdown and physical failures, a method carried out by the bump forming apparatus for removing charge of charge appearance semiconductor substrates, a charge removing unit for charge appearance semiconductor substrates, and a charge appearance semiconductor substrate. At least when the wafer is cooled after the bump bonding is connected on the wafer, electric charge accumulated on the wafer (202) because of the cooling is removed through direct contact with a post-forming bumps heating device (170), or the charge is removed by a decrease in temperature control so that charge can be removed in a noncontact state. Therefore, an amount of charge of the wafer can be reduced in comparison with the conventional art, so that the wafer is prevented from pyroelectric breakdown and damage such as a break or the like to the wafer itself.
机译:本发明提供一种可以防止电荷外观半导体衬底( 201、202 )发生热电击穿和物理故障的凸块形成设备( 101、501 ),该方法通过用于去除电荷外观半导体衬底的电荷的凸块形成设备,用于电荷外观半导体衬底的电荷去除单元和电荷外观半导体衬底。至少在将凸点键合连接到晶片之后冷却晶片时,由于冷却而积聚在晶片上的电荷( 202 )通过与后形成的凸点加热装置直接接触而被去除。 ( 170 ),或者通过降低温度控制来去除电荷,从而可以非接触状态去除电荷。因此,与传统技术相比,可以减少晶片的电荷量,从而防止晶片热电击穿和对晶片本身的破坏,例如破裂等。

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