Technique for enhancing accuracy of critical dimensions of a gate electrode by using characteristics of an ARC layer

摘要

In an improved technique for adjusting an etch time of a resist trim process, additional measurement data representing an optical characteristic, such as the reflectivity of an anti-reflective coating, is used. Since the initial thickness of the resist mask features may significantly depend on the optical characteristics of the anti-reflective coating, the additional measurement data allow compensation for process variations more efficiently as compared to the conventional approach.