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Atomic force microscopy measurements of contact resistance and current-dependent stiction

机译:原子力显微镜下接触电阻和电流依赖性静摩擦的测量

摘要

A modified atomic force microscope (AFM) is used to perform contact resistance and/or current-dependent stiction measurements for conductive thin films at controlled values of applied force. The measurements are preferably performed under conditions approximating the operation of the thin films as electrodes in microswitch array fingerprint sensors. A first, planar thin film is contacted with a second, curved thin film deposited over a round ball having a diameter of a few microns to a few tens of microns. The second film is preferably a coating deposited over the ball and over the arm controlling the ball motion. The coating deposited over the arm provides an electrically conductive path to the contact surface of the ball.
机译:改进的原子力显微镜(AFM)用于在施加的力的受控值下对导电薄膜执行接触电阻和/或电流相关的静摩擦测量。优选在接近薄膜作为微动开关阵列指纹传感器中的电极的操作的条件下进行测量。使第一平面薄膜与沉积在直径为几微米至几十微米的圆球上的第二弯曲薄膜接触。第二膜优选是沉积在球上方和控制球运动的臂上方的涂层。沉积在手臂上的涂层提供了通向球接触表面的导电路径。

著录项

  • 公开/公告号US6981407B2

    专利类型

  • 公开/公告日2006-01-03

    原文格式PDF

  • 申请/专利权人 SHIVA PRAKASH;

    申请/专利号US20030613446

  • 发明设计人 SHIVA PRAKASH;

    申请日2003-07-03

  • 分类号G01B5/28;

  • 国家 US

  • 入库时间 2022-08-21 21:40:40

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