SEMICONDUCTOR SCINTILLATION MATERIAL BASED ON COMPOUNDS OF AIIBVI AND A METHOD FOR OBTAINING THEREOF

摘要

The invention relates to the field of scintillation technique. A semiconductor scintillation material based on compounds of AIIBVI with activating admixture of one of components contains another admixture of one of components, which forms solid substitution solution with initial compound, at that as activator and substitution admixture components are selected, which form binary compounds of AIIBVI and which have difference of ratios of grate parameters as compared with initial compound of AIIBVI?25 % for compound with activating admixture and ?15 % for compound with substitution additive, and difference between electric negativeness of activating admixture and substitution component - ?10 %, and ?5 % - for substitution admixture and component to be substituted. Besides, it contains, in addition hydrogen at a concentration of 1?10-3-5?10-2 mole %, and concentration of oxygen is of 1?10-4-1?10-2 mole %. A method for obtaining material comprises preliminary thermal treatment of the charge in crucible in hydrogen flow at the pressure of (1.1-1.5).106 Pa at simultaneous heating thereof to the temperature of 1000-1100 DEGREE C, burning off the charge and subsequent growing in the atmosphere of inert gas at the pressure of 106-107 Pa by displacement of the crucible through the high temperature zone. Thermal treatment is carried out directly in the growth furnace by displacement of crucible with charge through the high temperature zone at a rate of 20-80 mm/hour, then the charge is cooled in continuous flow of hydrogen to the temperature of 800-900 DEGREE C, hydrogen is evacuated at that temperature to the pressure of 50-150 Pa, thereafter monocrystal is grown in inert gas.