CAPACITOR CONSTRUCTIONS, RUGGED SILICON-CONTAINING SURFACES, AND METHODS OF FORMING RUGGED SILICON-CONTAINING SURFACES

摘要

The invention encompasses a method of forming a rugged silicon-containing surface.A layer comprising amorphous silicon is provided within a reaction chamber ata first temperature. The temperature is increased to a second temperature atleast 400 C higher than the first temperature while flowing at leastone hydrogen isotope into the chamber. After the temperature reaches the secondtemperature, the layer is seeded with seed crystals. The seeded layer is thenannealed to form a rugged silicon-containing surface. The rugged silicon-containingsurface can be incorporated into a capacitor construction. The capacitor constructioncan be incorporated into a DRAM cell, and the DRAM cell can be utilized in an electronicsystem.