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METHODS OF FORMING DOPED AND UN-DOPED STRAINED SEMICONDUCTOR AND SEMICONDUCTOR FILMS BY GAS-CLUSTER ION IRRADIATION
METHODS OF FORMING DOPED AND UN-DOPED STRAINED SEMICONDUCTOR AND SEMICONDUCTOR FILMS BY GAS-CLUSTER ION IRRADIATION
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机译:气团离子辐照形成掺杂和未掺杂的应变半导体和半导体膜的方法
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摘要
Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such atoms into semiconductor substrates, with additional, optional introduction of dopant atoms and/or C. Processes for forming semiconductor films infused into and/or deposited onto the surfaces of semiconductor and/or dielectric substrates are also described. Such films may be doped and/or strained as well.
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