GaN is grown by creating a Ga vapor from a powder, and using an inert purge gas from a source to transport the vapor to a growth site where the GaN growth takes place. In one embodiment, the inert gas is NSUB2/SUB, and the powder source is GaN powder that is loaded into source chambers. The GaN powder is congruently evaporated into Ga and NSUB2/SUB vapors at temperatures between approximately 1000 and 1200°C. The formation of Ga liquid in the powder is suppressed by the purging of an inert gas through the powder. The poser may also be isolated from a nitride containing gas provided at the growth cite. In one embodiment, the inert gas is flowed through the powder.
展开▼
