THERMAL OXIDE FORMATION APPARATUS AND THE METHOD BY CHEMICAL VAPOR DEPOSITION IN WAFER

摘要

There is provided an apparatus for depositing a thermal oxide film on a semiconductor substrate using single chamber chemical vapor deposition, the apparatus having a chamber that includes a gas inlet line to which a reaction gas flows, a shower head for spraying the received reaction gas, a heater in which a wafer is settled, a heater supporting unit for supporting the heater, and a vacuum port for exhausting the reaction gas. The apparatus includes a TEOS gas storage unit connected to the gas inlet line to supply TEOS gas to the chamber, a controller for controlling the TEOS gas stored in the TEOS gas storage unit to be supplied by a predetermined amount when required and to be maintained at predetermined temperature, a vaporizer for vaporizing the TEOS gas supplied from theTEOS gas storage unit to be no less than predetermined temperature, a carrier gas storage unit connected to the outlet of the vaporizer to supply an inert gas to the chambertogether with the vaporized TEOS gas, and a second reaction gas storage unit connected to the inlet of the chamber to supply O2 gas that is a second reaction gas.