Circuit for linearizing the power control profile of a BiCMOS power amplifier

摘要

A two stage amplifier for a portable or cellular phone is disclosed which is manufactured using a fast BiCMOS process such as SiGe. A shunt circuit controlled by a switch is provided between a base of one of the amplifying transistors and a DC terminal to prevent it from operating in a Class B mode of operation when it is intended for the amplifier to be switched off.