THIN-FILM TRANSISTOR STRUCTURE, METHOD FOR MANUFACTURING THE THIN-FILM TRANSISTOR STRUCTURE, AND DISPLAY DEVICE USING THE THIN-FILM TRANSISTOR STRUCTURE

摘要

The present invention provides a thin film transistor structure in which at least a trench is formed in an insulating polymer film formed on a substrate. In the thin film transistor structure, a trench formed in the insulating polymer film accommodates a gate wiring constituted of a plurality of conductive layers. Provided also are a method of manufacturing the thin film transistor structure, and a display device including a thin film transistor array composed of the thin film transistors constituted as described above.