首页> 外国专利> STACKED BODY FOR COF SUBSTRATE, METHOD FOR MANUFACTURING SUCH STACKED BODY FOR COF SUBSTRATE, AND COF FILM CARRIER TAPE FORMED BY USING SUCH STACKED BODY FOR COF SUBSTRATE

STACKED BODY FOR COF SUBSTRATE, METHOD FOR MANUFACTURING SUCH STACKED BODY FOR COF SUBSTRATE, AND COF FILM CARRIER TAPE FORMED BY USING SUCH STACKED BODY FOR COF SUBSTRATE

机译:COF基质的堆叠体,COF基质的这种堆叠体的制造方法以及使用COF基质的这种堆叠体形成的COF薄膜载带

摘要

A stacked body which permits wiring of a driver IC chip to be recognized through an insulating layer, has strong adhesion between a conductor and the insulating layer and excellent electromigration resistivity, and to which fine processing, for example, that of a pitch of 30μm or less, can be performed, and a method for manufacturing such stacked body. The stacked body for COF substrate is provided with the insulating layer composed of an insulating resin on one plane of the conductor composed of a conductive metal foil. In the stacked body, the conductor thickness is 1-8μm, the surface roughness Rz of a plane touching the insulating layer of the conductor is 1.0μm or less, and the surface roughness Rz of a plane not touching the insulating layer of the conductor is 1.0μm or less. In the method for manufacturing the stacked body for COF substrate, the insulating layer is formed on the one plane of the conductive metal foil, which has a thickness of at least 10μm and a surface roughness Rz of 1.0μm or less on the one plane, a plane of the conductive metal foil not touching the insulating layer is chemically polished to have a conductive metal foil thickness of 1-8μm and a surface roughness Rz of 1.0μm or less to form the conductor.
机译:允许通过绝缘层识别驱动器IC芯片的布线,在导体和绝缘层之间具有很强的附着力以及优异的电迁移电阻率的层叠体,并且该层叠体经过精细处理,例如间距为30μm或可以进行更少的制造,并且提供了用于制造这种堆叠体的方法。用于COF基板的堆叠体在由导电金属箔构成的导体的一个平面上设置有由绝缘树脂构成的绝缘层。层叠体中,导体厚度为1〜8μm,与导体的绝缘层接触的平面的表面粗糙度Rz为1.0μm以下,与导体的绝缘层不接触的平面的表面粗糙度Rz为1.0μm以下。 1.0μm以下。在用于COF基板的堆叠体的制造方法中,绝缘层形成在导电金属箔的一个平面上,该绝缘层的厚度至少为10μm,并且在该平面上的表面粗糙度Rz为1.0μm或更小,将不接触绝缘层的导电金属箔的平面化学抛光以具有1-8μm的导电金属箔厚度和1.0μm或更小的表面粗糙度Rz以形成导体。

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