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HETEROJUNCTION FIELD EFFECT TRANSISTORS USING SILICON-GERMANIUM AND SILICON-CARBON ALLOYS
HETEROJUNCTION FIELD EFFECT TRANSISTORS USING SILICON-GERMANIUM AND SILICON-CARBON ALLOYS
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机译:硅锗和硅碳合金的异质结场效应晶体管
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摘要
Semiconductor devices, e.g., heterojunction field effect transistors, fabricated with silicon-germnanium buffer layer and silicon-carbon channel layer structures. The invention provides a method of reducing threading defect density via reducing germanium content in a SiGe relaxed buffer layer on which a strained silicon channel layer is formed, by forming the strained silicon channel layer of a silicon-carbon alloy, e.g., containing less than about 1.5 atomic % C substitutionally incorporated in the Si lattice of the alloy.
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