NANOMETRIC MOS TRANSISTOR WITH MAXIMIZED RATIO BETWEEN ON-STATE CURRENT AND OFF-STATE CURRENT

摘要

The invention concerns a MOS transistor whereof the gate length is smaller by twice the Broglie wavelength of the current carriers in the material of the channel. The channel region section (3) is reduced in the vicinity of the drain region (8) by at least one dimension at a value (e2) less than half said wavelength.