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DETECTING OVER PROGRAMMED MEMORY CELLS AFTER PROGRAMMING OF ADJACENT MEMORY CELLS
DETECTING OVER PROGRAMMED MEMORY CELLS AFTER PROGRAMMING OF ADJACENT MEMORY CELLS
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机译:在对相邻记忆细胞进行编程之后,检测已编程的记忆细胞
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摘要
In a non-volatile semiconductor memory system (or other type of memory system), a memory cell is programmed by changing the threshold voltage of that memory cell. Because of variations in the programming speeds of different memory cells in the system, the possibility exists that some memory cells will be over programmed. That is, in one example, the threshold voltage will be moved past the intended value or range of values. The present invention includes determining whether the memory cells are over programmed due to programming cells of an adjacent row.
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