首页> 外国专利> PROCESSES AND DONOR ELEMENTS FOR TRANSFERRING THERMALLY SENSITIVE MATERIALS TO SUBSTRATES

PROCESSES AND DONOR ELEMENTS FOR TRANSFERRING THERMALLY SENSITIVE MATERIALS TO SUBSTRATES

机译:将热敏材料转移到基材上的过程和施主元素

摘要

Methods of forming a patterned semiconducting-dielectric material on a substrate by thermal processes are disclosed, comprising heating a thermally imageable donor element comprising a substrate and a transfer layer of semiconductive material in conjunction with a dielectric. The donor is exposed with the positive image of the desired pattern to be formed on the receiver, such that the exposed portions of the layer of semiconductive and dielectric material are simultaneously transferred, forming the desired pattern of semiconductive and dielectric material on the receiver. The semiconducting material can be patterned to form a thin film transistor. The method can also be used to pattern a light-emitting polymer or small molecule in conjunction with the charge injection layer to form the light- emitting display for light-sensitive organic electronic devices. Donor elements for use in the process are also disclosed. Methods for forming thin film transistors and donor elements for use in the processes, are also disclosed.
机译:公开了通过热处理在基板上形成图案化的半导体电介质材料的方法,该方法包括加热包括基板和与电介质结合的半导体材料的传输层的可热成像的施主元件。给体被曝光以具有将在接收器上形成的期望图案的正像,使得半导体和介电材料层的暴露部分被同时转印,从而在接收器上形成了期望的半导体和介电材料图案。半导体材料可以被图案化以形成薄膜晶体管。该方法还可与电荷注入层一起用于图案化发光聚合物或小分子,以形成用于光敏有机电子器件的发光显示器。还公开了用于该方法的供体元件。还公开了形成用于该工艺的薄膜晶体管和施主元件的方法。

著录项

  • 公开/公告号KR20050109604A

    专利类型

  • 公开/公告日2005-11-21

    原文格式PDF

  • 申请/专利权人 E.I. DU PONT DE NEMOURS AND COMPANY;

    申请/专利号KR20057018045

  • 发明设计人 FINCHER GRACIELA BLANCHET;

    申请日2005-09-26

  • 分类号B41M5/38;B41M5/40;

  • 国家 KR

  • 入库时间 2022-08-21 21:28:01

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