首页> 外国专利> sp sp 3 /sp BONDING BORON NITRIDE THIN FILM HAVING SELF-FORMING SURFACE SHAPE BEING ADVANTAGEOUS IN EXHIBITING PROPERTY OF EMITTING ELECTRIC FIELD ELECTRONS, METHOD FOR PREPARATION THEREOF AND USE THEREOF

sp sp 3 /sp BONDING BORON NITRIDE THIN FILM HAVING SELF-FORMING SURFACE SHAPE BEING ADVANTAGEOUS IN EXHIBITING PROPERTY OF EMITTING ELECTRIC FIELD ELECTRONS, METHOD FOR PREPARATION THEREOF AND USE THEREOF

机译:sp sp 3 / sp具有自形成表面形状的键合氮化硼薄膜,具有很好的发射电场电子的性能,其制备方法和用途

摘要

The object of the present invention is to provide a material excellent in field electron emission which can withstand the high intensity of electric field, allows the enhanced emission of electrons resulting in a high density of current, and does not degrade during long use.;The solving means consists of providing a membrane body of sp3-bonded boron nitride excellent in field electron emission obtained by a method comprising the steps of introducing a reactive gas including a boron source and a nitrogen source into a reaction system; adjusting the temperature of a substrate in the reaction chamber to fall between room temperature to 1300ºC; radiating a UV beam onto the substrate with or without the concomitant existence of plasma; and forming via vapor-phase reaction a membrane on the substrate in which a surface texture allowing excellent field electron emission is formed in a self-organized manner.
机译:本发明的目的是提供一种在场电子发射方面优异的材料,该材料可以承受高电场强度,允许增强的电子发射,从而导致高电流密度,并且在长期使用时不会降解。解决方法是,提供一种通过以下方法得到的,在场电子发射方面优异的sp3键合的氮化硼的膜主体,该方法包括以下步骤:将包含硼源和氮源的反应气体导入反应体系中。将反应室内的基板温度调节至室温至1300℃之间。在存在或不存在等离子体的情况下将紫外线束照射到基板上;并通过气相反应在基板上形成膜,其中以自组织方式形成允许优良的场电子发射的表面纹理。

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