PLASMA PROCESSING METHOD AND APPARATUS USING DYNAMIC SENSING OF A PLASMA ENVIRONMENT

摘要

The present invention applied electric power to the plasma, the process pressure, gas flow rate, and at least one control parameter of the high frequency bias power to the wafer in a range that does not affect the plasma processing results of the wafer compared to the total plasma processing time is very short time and variation, is to monitor the abnormal state of the plasma generated at the time.; By using the signal obtained by this monitoring method performing a control of the plasma processing, such as etching or a fine quality of the film formation process, the surface treatment is possible.