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METHOD FOR THE PRODUCTION A NANOELEMENT FIELD EFFECT TRANSISTOR, NANOELEMENT-FIELD EFFECT TRANSISTOR AND SURROUNDED GATE STRUCTURE
METHOD FOR THE PRODUCTION A NANOELEMENT FIELD EFFECT TRANSISTOR, NANOELEMENT-FIELD EFFECT TRANSISTOR AND SURROUNDED GATE STRUCTURE
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机译:生产纳米元件场效应晶体管,纳米元件场效应晶体管和围栅结构的方法
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摘要
A nanoelement field effect transistor includes a nanotube disposed on the substrate. A first source/drain region is coupled to a first end portion of the nanoelement and a second source/drain region is coupled to a second end portion of the nanoelement. A recess in a surface region of the substrate is arranged in such a manner that a region of the nanoelement arranged between the first and second end portions is taken out over the entire periphery of the nanoelement. A gate-insulating structure covers the periphery of the nanoelement and a gate structure covers the periphery of the gate-insulating structure.
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