SEMICONDUCTOR DEVICE HAVING BUMPS AND METAL PADS COMPRISING A PLURALITY OF SUB-PADS AND FABRICATION METHOD THEREOF

摘要

Provided are a semiconductor device having a metal pad and a metal bump including a plurality of sub pads, and a manufacturing method thereof. The semiconductor device includes an intermetallic insulating film formed on a semiconductor substrate and a recessed region formed in a predetermined region of the intermetallic insulating film. The recess region has a bottom surface lower than an upper surface of the interlayer insulating film. A metal pad is provided in the recess area. The metal pad is composed of a plurality of sub pads and provides gap regions between the sub pads. A protective film is disposed on the interlayer insulating film. The passivation layer has a pad opening that exposes the metal pad and the gap regions. Metal bumps are provided on the metal pads exposed by the pad openings. The metal bumps fill the gap regions. An under bump metal pattern is interposed between the metal bump and the metal pad. The under bump metal pattern extends along the surface level of the gap regions. Also provided is a method of manufacturing the semiconductor device.;       Metal pad, under bump metal, metal bump, adhesion, flip chip