COMPOSITION FOR CLEANING ETCH RESIDUE AND CLEANING METHOD OF USING THE SAME

摘要

The present invention relates to an etching residue cleaning composition and a cleaning method using the same, and more particularly, to an etching residue cleaning composition comprising sulfuric acid, an oxidizing agent and deionized water, and optionally ammonium fluoride, and the composition comprising a substrate Or a cleaning method for contacting a semiconductor device structure to remove etching residues present on the substrate or structure. When the cleaning composition according to the present invention is used, various kinds of etching residues present on various substrates or semiconductor device structures can be efficiently removed without damaging metal wiring such as aluminum, and thus, high density It can be advantageously used to remove etching residues occurring on a substrate or semiconductor structure in the manufacture of multilayer semiconductor devices.;Etch Residue Cleaner