METHOD FOR MAKING NARROW MAGNETIC DOMAIN WALL AND MAGNETIC RESISTANCE DEVICE AND MAGNETIC FIELD GENERATING DEVICE USING THE METHOD

摘要

A method for forming a narrow magnetic domain wall and a magnetic resistor device and a magnetic field generating apparatus using the same are provided to adjust artificially the position and thickness of the magnetic domain wall by using a local exchange interacting structure. A first ferroelectric layer(F1) and a second ferroelectric layer(F2) are arranged to have a connection portion, wherein the connection portion is formed by a local exchange interaction between the first and the second ferroelectric layers. The thicknesses of the first and the second ferroelectric layers are different from each other. The second ferroelectric layer is composed of a first region and a second region. The first ferroelectric layer is inexistent within the second region. A magnetic domain wall is formed at a boundary between the first and the second regions. The position and thickness of the magnetic domain wall are adjusted by controlling the thickness of the first and the second ferroelectric layers and a coupling energy between the first and the second ferroelectric layers.