MANUFACTURING METHOD OF THIN FILM TRANSISTOR, DISPLAY DEVICE USING THIN FILM TRANSISTOR, AND ELECTRONIC DEVICE INCORPORATING DISPLAY DEVICE

摘要

A method for fabricating a TFT is provided to reduce a leakage current from a gate insulation layer by forming a dense gate insulation layer with a uniform thickness at a temperature that doesn't influence a glass substrate or a heat-resisting plastic substrate wherein plasma damage and cracks are controlled in the gate insulation layer. A base insulation layer is formed on a glass substrate. A semiconductor layer of a predetermined pattern is formed on the base insulation layer, including amorphous silicon. In a temperature condition of 100 deg.C or higher in which the temperature of the glass substrate is lower than a strain point of the glass substrate, a plasma oxidation process or a plasma nitrification process is performed on the semiconductor layer including the amorphous silicon to form a gate insulation layer. A gate electrode is formed on the gate insulation layer. At a temperature of 100 deg.C or higher in which the temperature of the glass substrate is lower than a strain point of the glass substrate, a plasma oxidation process or a plasma nitrification process is performed on the gate electrode to form a passivation layer.