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Manufacturing method of low reflective single and multi-crystal silicon solar cells by the modification of local plasma density and it's manufacturing apparatus

机译:改变局部等离子体密度的低反射率单晶和多晶硅太阳能电池的制造方法及其制造装置

摘要

PURPOSE: An apparatus for fabricating low-reflection high-efficiency single crystal and polycrystalline silicon solar cells is provided to remarkably reduce time and cost necessary for production by locally controlling a plasma density without using a photoresist layer mask. CONSTITUTION: A plurality of mounting electrode units into which a solar cell silicon wafer is interposed are installed in a chamber. A gas supply unit supplies reaction gas to the inside of the chamber, installed in one side of the chamber. A vacuum apparatus makes the inside of the chamber vacuum, installed in the other side of the chamber. A power supply unit supplies power to the mounting electrode unit, installed in a side of the chamber.
机译:目的:提供一种用于制造低反射率高效率单晶硅和多晶硅太阳能电池的设备,以通过不使用光刻胶层掩模而局部控制等离子体密度来显着减少生产所需的时间和成本。构成:多个安装电极单元,其中插入了一个太阳能电池硅片,安装在一个室内。气体供应单元将反应气体供应到安装在腔室的一侧中的腔室的内部。真空装置使腔室内部真空,安装在腔室的另一侧。电源单元向安装在腔室侧面的安装电极单元供电。

著录项

  • 公开/公告号KR100543504B1

    专利类型

  • 公开/公告日2006-01-20

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20030045486

  • 发明设计人 이 준 신;

    申请日2003-07-05

  • 分类号H01L31/04;

  • 国家 KR

  • 入库时间 2022-08-21 21:24:25

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