FILLING SUBSTRATE DEPRESSIONS WITH SiO2 BY HDP VAPOR PHASE DEPOSITION WITH PARTICIPATION OF H2O2 OR H2O AS REACTION GAS

摘要

the present invention is a reactive gas as H ₂ O ₂ and H ₂ O using a method for filling a high density plasma (HDP) depression of the substrate by vapor deposition (depression) a SiO ₂ ; as a first silicon-containing reaction gas , and further reaction of oxygen gas precursor (oxygen precursor) is supplied to the reaction chamber , preferably , 10 ¹⁶ ion / m ³ greater than high-density plasma is generated. By normal precursor O ₂ substitution is used at least in part , H ₂ O ₂ and H ₂ O is is supplied to the reaction chamber during the deposition O ₂ due to ion impact sputtering - SiO ₂ causing undesirable deposition of the material - thereby further reduce the