of the silicon single crystal ingot production device , manufacturing method using the apparatus , from which the silicon single crystal ingot and the silicon wafer is manufactured

摘要

invention Czochralski method in accordance with the growth of the silicon single crystal ingot according to the device , the object is to provide an apparatus for producing a single crystal ingot to improve the growth rate of the in-plane uniformity , and ingot quality of a silicon wafer and at the same time achieved. For this purpose, the chamber according to the present invention ; It is provided on the interior of the chamber , a crucible containing a silicon melt ; A heater for heating the crucible; The silicon single crystal ingot installed between so as to surround the silicon single crystal ingot and the crucible is heat shield to block the heat emitted from the silicon melt and the ingot ; And it is attached in the heat shield to the nearest portion of the silicon single crystal ingot , and provides a device for manufacturing a silicon single crystal ingot comprising a cylindrical rail portions surrounding the silicon single crystal ingot .